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Selective Reactive ION Etching Effects on GaAs/AlGaAs Modfets

Published online by Cambridge University Press:  26 February 2011

D. G. Ballegeer ,
S. Agarwala ,
M. Tong ,
A. A. Ketterson ,
I. Adesida ,
J. Griffin  and
M. Spencer
D. G. Ballegeer
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
S. Agarwala
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
M. Tong
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
A. A. Ketterson
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
I. Adesida
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
J. Griffin
Affiliation:
Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
M. Spencer
Affiliation:
Hloward University, Department of Electrical Engineering, Washington, D. C.
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Abstract

The effects of selective reactive ion etching (SRIE) in SiCl4/SiF4 plasmas on GaAs/AlxGai-xAs heterostructures have been studied. Auger electron spectroscopy (AES) and Schottky diode measurements were performed to determine the effects of SRIE and post-SRlE processing on the surface conditions of AlGaAs layers. The degradation of the two-dimensional electron gas (2-DEG) properties of GaAs/Al0.3Ga0.7As heterostructures due to low-energy ion bombardment during SRIE were investigated by conducting Hall measurements at 300 and 77 K. Finally, measurements were performed on dry etched GaAs/Al0.3Ga0.7As modulation-doped field effect transistors (MODFETs) to determine the effects of SRIE on transconductance and threshold voltage. It is shown that extensive overetching during gate recessing results in an increase in device threshold voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 335
Copyright
Copyright © Materials Research Society 1992

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References

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