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Seed-layer Deposition for Sub 0.25 µm Cu Metallization Using a Line Cusp Magnetron Plasma Source

Published online by Cambridge University Press:  17 March 2011

Sunil Wickramanayaka ,
Hanako Nagahama ,
Eisaku Watanabe ,
Toshihiko Hayashi ,
Makoto Sato ,
Yukito Nakagawa ,
Shinya Hasegawa ,
Shigeru Mizuno  and
Yoichiro Numasawa
Sunil Wickramanayaka
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Hanako Nagahama
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Eisaku Watanabe
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Toshihiko Hayashi
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Makoto Sato
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Yukito Nakagawa
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Shinya Hasegawa
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Shigeru Mizuno
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
Yoichiro Numasawa
Affiliation:
Anelva Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183-8508, Japan
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Abstract

A magnetically enhanced capacitively coupled plasma source was developed for sputter deposition of Cu seed layers on sub 0.25µm via or contact holes. The plasma source is of planer parallel plate configuration where the Cu target plate is one of the electrodes. For the generation of plasma, 60 MHz rf power is selected in order to increase the plasma density. Additionally, a line cusp magnetic field is used to further increase the plasma density. The film deposition rate and uniformity obtained with this plasma source is∼200 nm/min and ∼±5%, respectively. The Cu film resistivity lies around 2 µωcm. This sputtering system yields good film coverage on bottom and sidewalls of via holes with an aspect ratio > 5; therefore, a perfect Cu filling could be realized by electroplating process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D6.3.1
Copyright
Copyright © Materials Research Society 2000

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