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Room Temperature Growth of Conducting ZnO Films

Published online by Cambridge University Press:  10 February 2011

S. Witanachchi ,
Y. Ying ,
A. M. Miyawa  and
P. Mukherjee
S. Witanachchi
Affiliation:
Laboratory for Advanced Materials Science and Technology, Department of Physics, University of South Florida, Tampa, FL 33620.
Y. Ying
Affiliation:
Laboratory for Advanced Materials Science and Technology, Department of Physics, University of South Florida, Tampa, FL 33620.
A. M. Miyawa
Affiliation:
Laboratory for Advanced Materials Science and Technology, Department of Physics, University of South Florida, Tampa, FL 33620.
P. Mukherjee
Affiliation:
Laboratory for Advanced Materials Science and Technology, Department of Physics, University of South Florida, Tampa, FL 33620.
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Abstract

Single and dual-laser ablation techniques have been used to grow conductive ZnO films at room temperature by ablating a Zn metal target in oxygen ambient. The emission spectroscopy of the material plumes shows a significant presence of oxygen ions and Zn ions in the dual-laser ablated plume. Furthermore, dual-laser ablated plumes expanded rapidly in the radial direction resulting in large-area uniform films. The electrical properties of the films deposited on glass substrates depend critically on the ambient oxygen pressure. Conductivities of the order of 103 (ω.cm)-1 have been obtained for films deposited at room temperature by the dual-laser ablation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 185
Copyright
Copyright © Materials Research Society 1998

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