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Role of Hydrogen in the Grain Growth in Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Gye-Hyun Lee  and
Jong-Hwan Yoon
Gye-Hyun Lee
Affiliation:
Department of Physics, Kangwon National University, 192-1 Hyoja-dong, Chuncheon, Kangwon-do, 200-701, Korea, Republic of
Jong-Hwan Yoon
Affiliation:
[email protected] National UniversityDepartment of Physics192-1 Hyoja-dongChuncheonKangwon-do200-701Korea, Republic of
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Abstract

Thick microcrystalline silicon (mc-Si:H) films were exposed to atomic hydrogen plasma at substrate temperature of 220°C after deposition. The microstructure of μc-Si:H films after exposure was characterized using Raman back scattering spectroscopy and transmission electron microscopy (TEM). Raman spectra reveal that the intensity near 520 cm−1 significantly increases after hydrogen exposure, indicating an increase of crystallinity in the films. TEM micrographs of μc-Si:H films exposed to atomic hydrogen also show an increase in the size of grains and a growth of crystalline grains ranging from surface to bulk. These results suggest that crystalline grain formation in μc-Si:H films is likely to be caused by chemical annealing.

Keywords

microstructurecrystal growthfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-02
Copyright
Copyright © Materials Research Society 2006

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