Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-07-07T15:16:49.176Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability of Dielectric Barrier Films in Copper Damascene Applications

Published online by Cambridge University Press:  17 March 2011

Albert S. Lee ,
Annamalai Lakshmanan ,
Nagarajan Rajagopalan ,
Zhenjiang Cui ,
Maggie Le ,
Li Qun Xia ,
Bok Heon Kim  and
Hichem M'Saad
Albert S. Lee
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Annamalai Lakshmanan
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Nagarajan Rajagopalan
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Zhenjiang Cui
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Maggie Le
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Li Qun Xia
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Bok Heon Kim
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Hichem M'Saad
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Get access

Abstract

The film properties of two PECVD deposited dielectric copper barrier films have been optimized to improve BEOL device reliability in terms of electromigration. Two critical aspects that affect electromigration are the dielectric barrier film hermeticity and adhesion to copper. We use a method to quantify the barrier film hermeticity and have optimized the hermeticity of the BLOκ™ low-κ dielectric barrier film to be similar to that of silicon nitride. By using FT-IR we find that the film porosity has a much stronger effect than the film stoichiometry on hermeticity. In addition, the interfaces between Damascene Nitride™ with copper, as well as BLOκ with copper have been engineered to improve the interfacial adhesion energy to >10 J/m2 for both Damascene Nitride and BLOκ.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F5.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lane, M. W., Liniger, E. G., and Lloyd, J. R., Journal of Applied Physics 93, 1417 (2003).CrossRefGoogle Scholar
[2] Dixit, G. and Padhi, D., Proc. of the International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, India 393 (2003).Google Scholar
[3] Xu, P., Huang, K., Patel, A., Rathi, S., Tang, B., Ferguson, J., Huang, J., and Ngai, C., Proceedings of the International Interconnect Technology Conference 1999 109 (1999).Google Scholar
[4] Lee, A., Rajagopalan, N., Le, M., Kim, B. H., and M'Saad, H., MRS Symp. Proc. Vol. 715 A10.7.1 (2002).Google Scholar
[5] Lee, A. S., Rajagopalan, N., Le, M., Kim, B. H., and M'Saad, H., Journal of The Electrochemical Society 151 F7 (2002).CrossRefGoogle Scholar
[6] Ma, Q., Fujimoto, H., Flynn, P., Jain, V., Adibi-Rizi, F., and Dauskardt, R. H., MRS Symp. Proc. Vol. 391 91 (1995).CrossRefGoogle Scholar
[7] Jenkins, M., Snodgrass, J., Dauskardt, R. H., and Bravman, J. C., MRS Symp. Proc. Vol. 629 FF5.12.1 (2000).CrossRefGoogle Scholar