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Reduction of Threading Dislocation Density in AlGaN by Indium Incorporation

Published online by Cambridge University Press:  01 February 2011

H. Kang ,
Z. C. Feng ,
I. Ferguson ,
S. P. Guo  and
M. Pophristic
H. Kang
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
Z. C. Feng
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
S. P. Guo
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A
M. Pophristic
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A
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Abstract

The addition of indium, even to small concentrations, to AlGaN has resulted in improved optical and doping properties for these materials. This paper is the first report of improved structural properties for indium containing AlGaN layers. A systematic series of the AlGaN layers with nominal concentration of 20% aluminum were grown by metal-organic chemical vapor deposition with traces amounts of indium incorporated into the layers (up to 0.15% indium). X-ray diffraction analysis of the layers was completed using Williamson Hall plots and reciprocal space mapping to investigate any change in the columnar structure of the initial AlGaN layers. It was found that the threading dislocation densities and lateral coherence length showed a systematic variation with indium incorporation. The threading dislocation density is lowered as indium composition increased with a corresponding increase in lateral coherence length. This indicates that even the incorporation of trace amounts of indium improves the structural properties of these epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.71
Copyright
Copyright © Materials Research Society 2004

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References

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