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Rapid Thermal Processing — A User'S Perspective

Published online by Cambridge University Press:  28 February 2011

R. T. Fulks
R. T. Fulks*
Affiliation:
Electronics and Imaging Laboratory, Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The technique of rapid thermal processing (RTP) has evolved from research laboratory efforts to quickly heat small pieces of semiconductor material using pulsed or scanned lasers to high throughput, production RTP equipment capable of rapidly heating eight-inch silicon wafers to greater than 1000 deg C in 10 seconds. Furthermore, the initial application of annealing ion implantation damage has expanded to include silicide formation, oxide reflow, contact formation, hillock control and more recently oxidation and nitridation. Nearly a dozen vendors now produce RTP equipment and the potential user must answer the question — “Which equipment is best for me?” The researcher's principal concerns for RTP equipment are flexibility and control while the production engineer wants unifomity, reproducibility, and a reasonable throughput. Meanwhile, the device designer wants a “safe” process with no contamination or other adverse device degradation effects. This paper will focus on these and other issues associated with the use of rapid thermal processing from a user' perspective including some thoughts on where RTP may be headed in the future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 249
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Wu, I-W., Fulks, R. T., and Mikkelsen, J. C. Jr., J. Appl. Phys. 60, 2422 (1986).Google Scholar
2. Kachurin, G. A., Pridachin, N. B., and Smirnov, L. S., Sov. Phys. Semicond. 9, 946 (1976).Google Scholar
3. McMahon, R. A. and Ahmed, H., Electron. Lett. 15, 45 (1979).Google Scholar
4. Fulks, R. T., Russo, C. J., Hanley, P. R., and Kamins, T. I., Appl. Phys. Lett. 39, 604 (1981).Google Scholar
5. Finetti, M., Solmi, S. and Soncini, G., Solid-State Electr. 24, 539 (1981).Google Scholar
6. Fulks, R. T., Powell, R. A., and Stacy, W. T., IEEE Electr. Dev. Lett. EDL–3, 179 (1982).Google Scholar
7. Gat, A., Private Communication.Google Scholar
8. Shatas, S. and Ramani, R., Workshop on Refractory Metal Silicides for VLSI, May, 1983, San Juan Batista, CA.Google Scholar
9. Nulman, J., Krusius, J. P., and Gat, A., IEEE Electr. Dev. Lett. EDL–6, 205 (1985).Google Scholar