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Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, Tem Study and GaAs P-I-N Photodetector on Si

Published online by Cambridge University Press:  28 February 2011

Y.H. Lo ,
M.-N. Charasse ,
H. Lee ,
D. Vakhshoori ,
Y. Huang ,
Peter Yu ,
Z. Liliental-Weber ,
M. Werner  and
S. Wang
Y.H. Lo
Affiliation:
University of California,Berkeley,CA
M.-N. Charasse
Affiliation:
University of California,Berkeley,CA
H. Lee
Affiliation:
University of California,Berkeley,CA
D. Vakhshoori
Affiliation:
University of California,Berkeley,CA
Y. Huang
Affiliation:
University of California,Berkeley,CA
Peter Yu
Affiliation:
University of California,Berkeley,CA
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory,Berkeley,CA
M. Werner
Affiliation:
Lawrence Berkeley Laboratory,Berkeley,CA
S. Wang
Affiliation:
University of California at Berkeley and Lawrence Berkeley Laboratory
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Abstract

Raman scattering is measured along a bevel etched GaAs epitaxial film grown on Si by molecular beam epitaxial (MBE). From the correlation length profile of Raman scatteringmost dislocation lines are confined in the 2000Å regions close to the interface. The strain profile calculated from the Raman peak shift shows that about 0.6% compressive strain exists near the interface because of lattice mismatch. However, as one moves away from the interface, the compressive strain is gradually counterbalanced by thermal expansion. Transmission electron microscope (TEM) studies of the local dislocation image and properties show that an ultra clean Si surface is essential for dislocation confinement. From high resolution TEM, we find that the distance between dislocations at the interface is nonuniform, varying from 50Å to 125Å with an average distance at 81Å. Finally, a GaAs p-i-n photodetector on Si substrate is fabricated. Even though a normal photoresponse curve is obtained, the high dark current (50nA) and relatively low responsivity (0.01A/W) show that the material quality needs to be further improved to make a minority carrier vertical transition device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 149
Copyright
Copyright © Materials Research Society 1987

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References

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