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Radiation Defects in SiC - Electron Irradiation With Different Energies

Published online by Cambridge University Press:  21 February 2011

D. Volm ,
B. K. Meyer ,
E. N. Mokhov  and
P. G. Baranov
D. Volm
Affiliation:
Physikdepartment E16, Technical University Munich, D-85747 Garching, Germany
B. K. Meyer
Affiliation:
Physikdepartment E16, Technical University Munich, D-85747 Garching, Germany
E. N. Mokhov
Affiliation:
Physikdepartment E16, Technical University Munich, D-85747 Garching, Germany
P. G. Baranov
Affiliation:
Physikdepartment E16, Technical University Munich, D-85747 Garching, Germany
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Abstract

Radiation defects in 6H SiC introduced by electron irradiation at energies of 400 keV and 1 MeV are studied by low-temperature photoluminescence and Zeeman spectroscopy. We observe a new two line spectrum at 2.547 and 2.528 eV which dominates in the spectrum of the sample irradiated at 400 keV. For 1 MeV irradiation numerous recombination lines are observable and also the well known D1 center lines appear. Annealing the sample at 1100 °C leads to the disappearance of almost all lines but the D1 lines are still present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 705
Copyright
Copyright © Materials Research Society 1994

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