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Proton and Neutron Damage in Thick Amorphous Silicon Diodes

Published online by Cambridge University Press:  25 February 2011

R. E. Hollingsworth ,
J. Xi ,
A. Madan  and
F. E. Cecil
R. E. Hollingsworth
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
J. Xi
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
A. Madan
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
F. E. Cecil
Affiliation:
Colorado School of Mines, Physics Dept., Golden, Colorado, 80401, U.S.A.
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Abstract

Thin film amorphous silicon diodes are being examined as a possible high energy particle detector for use in the superconducting super collider. One of the key requirements for any such detector is the ability to withstand relatively high doses of high energy particles without degradation of performance. We report here results of degradation studies of amorphous silicon p-i-n diodes to protons and neutrons with energies in excess of 100 keV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 655
Copyright
Copyright © Materials Research Society 1989

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References

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