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Properties of WSix-Schottky Diodes on n-Type GaAs Sputtered under UHV Background Conditions
Published online by Cambridge University Press: 26 February 2011
Abstract
Multilayered WSix films for use as gates in a self-aligned refractory gate process of GaAs MESFETs have been RF sputtered onto GaAs wafers under UHV background conditions in order to study their structure and morphology as well as their contact electrical properties. Annealed films deposited at 300°C with single layer thickness of 6 and 3 nm for W and Si respectively have a smooth morphology free from cracks and blisters and show a good adhesion to the substrate. Schottky diodes prepared on n-GaAs exhibit an almost excellent I-V characteristics with a barrier height of 0.73 V and an ideality factor of 1.11. In addition E - and D-FETs fabricated on implanted s.i. wafers have good electrical parameters with transconductances of 200 mS/mm at 1 μm gate length.
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- Copyright © Materials Research Society 1989