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Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

Published online by Cambridge University Press:  22 February 2011

I. Golecki ,
J. Marti  and
F. Reidinger
I. Golecki
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
J. Marti
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
F. Reidinger
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
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Abstract

Monocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 445
Copyright
Copyright © Materials Research Society 1993

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References

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