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Precision Tem Sample Preparation Using Focused Ion Beam Marking Strategies

Published online by Cambridge University Press:  21 February 2011

Christopher E. Sanborn  and
Sharon A. Myers
Christopher E. Sanborn
Affiliation:
National Semiconductor Corp., Analytical Services Group, P.O. Box 58090, MIS D2800, Santa Clara, CA 95052-8090
Sharon A. Myers
Affiliation:
National Semiconductor Corp., Research Group, P.O. Box 58090, MIS C1000, Santa Clara, CA 95052-8090
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Abstract

Focused ion beam (FIB) etching has been shown to be an effective method for TEM sample prep. The system uses a finely focused beam of gallium ions to remove surface material from selected areas. When used in conjunction with a metal-organic gas source, a conductive layer can be deposited in specific areas.

In a production atmosphere, it is not always possible to use the FIB equipment for the length of time required to completely prepare a cross-sectional sample. Instead, the FIB has been used to indicate specific areas, such as blown fuses or shorts by “marking” the area so that it is easily optically located. Unconventional TEM sample prep techniques were developed to prepare the cross-sectional samples from specific target areas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 239
Copyright
Copyright © Materials Research Society 1992

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