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Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

Published online by Cambridge University Press:  15 February 2011

D. Dimova-Malinovska ,
M. Tzolov ,
M. Kamenova ,
N. Tzenov ,
M. Sendova-Vassileva  and
D. Nesheva
D. Dimova-Malinovska
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, [email protected]
M. Tzolov
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, [email protected]
M. Kamenova
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, [email protected]
N. Tzenov
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, [email protected]
M. Sendova-Vassileva
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, [email protected]
D. Nesheva
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, 1784 Sofia, Bulgaria
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Abstract

The results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 167
Copyright
Copyright © Materials Research Society 1996

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References

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Richter, A., Steiner, P., Koslowski, F., and Lang, W., IEEE Electron Devices Lett. 12, 691 (1991).Google Scholar
3. Zheng, J. P., Jiao, K., Shen, W., Anderson, W. and Kwok, H., Appl. Phys. Lett. 61, 459 (1992).Google Scholar
4. Stemtad, G., Kunst, M. and Vial, C., Sol. En. Mater. and Solar Cells 26, 277 (1992).Google Scholar
5. Vitanov, P., Kamenova, M., Kanev, St. Tjutjundziev, N. and Dimova-Malinovska, D., Renevable Energy, v.5, part III, p. 1787 (Elsevier Sci. Ltd. 1994).Google Scholar
6. Fathauer, R.W., George, T., Ksendzov, A. and Vasques, R.P., Appl. Phys. Lett. 60, 995 (1992).Google Scholar
7. Maruska, H.P., Namavar, F. and Kalkhoran, N.M., Appl. Phys. Lett 61, 1338 (1992).Google Scholar
8. Koshida, N., Koyama, H., Yamamoto, Y. and Collins, G.J., Appl. Phys. Lett. 63, 2655 (1993).Google Scholar
9. Dimova-Malinovska, D., Kamenova, M., Sendova-Vassileva, M., Tzenov, N. and Tzolov, M., Bulg. Patent no. 99978 (05.09.1995).Google Scholar
10. Dimova-Malinovska, D., Tzenov, N., Tzolov, M., and Vassilev, L., Proc. of 9th Int. Sch. on Vac. El. and Ion Technol., VEIT 1995, 14–18 Sept. 1995 Sozopol (to be published in Vacuum).Google Scholar
11. Ben-Chorin, M., Moeller, F., and Koch, F., J. Appl. Phys. 77, 4482 (1995).Google Scholar
12. Gosh, A.K., Fishman, C., and Feng, T. J. Appl. Phys. 49, 3490 (1978).Google Scholar
13. Tsybeskov, I., Duttagupta, S.P., and Fauchet, P.M., Sol. St. Comm. 95, 429 (1995).Google Scholar
14. Peng, C., Fauchet, P.M., Hirschman, K.D., and Kurinec, S.K. (Mater. Res. Soc. Proc. 358 (1995) p. 689.Google Scholar
15. Lampert, M. and Mark, P., Current Injection in Solids, (Acad. Press, New York), p. 15 1970.Google Scholar
16. Steiner, P., Kozlowski, F., and Lang, W. (Mater. Res. Soc. Proc. 358, 1995) p. 665.Google Scholar
17. Linnros, J. and Lalich, N., J. Appl. Phys. 66, 3048 (1995).Google Scholar
18. Kruangam, D., in Amorphous and Microcrystalline Semiconductor Devices - Optoelectronic Devices; edited by Kanicky, J. (Artech House, Boston, 1991), p. 195 Google Scholar
19. Kressel, H. and Butler, J.K., Semiconductor Laser and Heterojunction LED’ s (Academic, Orlando, FL, 1977).Google Scholar
20. Dimova-Malinovska, D., Kamenova, M., Sendova-Vassileva, M., Marinova, Ts.and Krastev, V., EMRS 1995 Spring Meeting, May 22–26, 1995, Strasbourg, Thin Solid Films, (in press).Google Scholar
21. Maruska, H.P., Namavar, F., and Kalkhoran, N.M., Appl. Phys. Lett 63, 45 (1993).Google Scholar