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Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

Published online by Cambridge University Press:  01 February 2011

Ilya V. Karpov ,
David Kencke ,
Derchang Kau ,
Stephen Tang  and
Gianpalo Spadini
Ilya V. Karpov
Affiliation:
[email protected], Intel, Santa Clara, California, United States
David Kencke
Affiliation:
[email protected], Intel, Portland, Oregon, United States
Derchang Kau
Affiliation:
[email protected], Intel, Santa Clara, California, United States
Stephen Tang
Affiliation:
[email protected], Numonyx B.V., San Jose, California, United States
Gianpalo Spadini
Affiliation:
[email protected], Intel, santa clara, California, United States
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Abstract

We present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.

Keywords

memorydeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G14-01-H07-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Lai, Stefan and Lowrey, Tyler, IEDM Tech. Dig. (IEEE, 2001), p. 903.Google Scholar
2 Ovshinsky, S., Phys. Rev. Lett., 21, p. 1450 (1968).10.1103/PhysRevLett.21.1450Google Scholar
3 Adler, D., Henisch, H., and Mott, N., Reviews of Modern Physics, 50, p. 209 (1978)10.1103/RevModPhys.50.209Google Scholar
4 Kau, D., Tang, S., Karpov, I., Dodge, R., Klehn, B., Kalb, J., Strand, J., Diaz, A., Leung, N., Wu, J., Lee, S., Langtry, T., Chang, K., Papagianni, C., Lee, J., Hirst, J., Erra, S., Flores, E., Righos, N., Castro, H., and Spadini, G., IEDM Tech. Dig. (IEEE, 2009), p. 617.Google Scholar
5 Karpov, I., Savransky, S., and Karpov, V., 22nd IEEE Nonvolatile Semiconductor Memory Workshop, (IEEE, 2007), p. 56.Google Scholar
6 Kencke, D., Karpov, I., Johnson, B., Lee, S., Kau, D., Hudgens, S., Reifenberg, J., Savransky, S., Zhang, J., Giles, M., and Gianpaolo Spadini, IEDM Tech. Dig. (IEEE, 2007), p. 323.Google Scholar
7 Karpov, I., Mitra, M., Kau, D., Spadini, G., Kryukov, A., and Karpov, V., Appl. Phys. Lett. 92, 173501 (2008).10.1063/1.2917583Google Scholar
8 Nardone, M., Karpov, V. G., Jackson, D. C. S., and Karpov, I. V., Appl. Phys. Lett. 94, 103509 (2009).10.1063/1.3100779Google Scholar
9 Karpov, V., Kryukov, Y., Karpov, I., and Mitra, M., Phys. Rev. B, 78, 052201 (2008)10.1103/PhysRevB.78.052201Google Scholar
10 Karpov, V., Kryukov, Y., Mitra, M., and Karpov, I., J. Appl. Phys. 104, 054507 (2008).Google Scholar
11 Nardone, M., Karpov, V.G., and Karpov, I. V., J. Appl. Phys., 107, 054519 (2010).Google Scholar
12 Karpov, I., Mitra, M., Kau, D., Spadini, G., Kryukov, Y., and Karpov, V., J. Appl. Phys. 102, 124503 (2007) and I. Karpov, M. Mitra, D. Kau; G. Spadini, Y. Kryukov, and V Karpov, International Symposium on VLSI Technology, Systems and Applications (IEEE, 2008). p.140.10.1063/1.2825650Google Scholar