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Oxidation and Diffusion at Poly-SiGe/GaAs Interfaces

Published online by Cambridge University Press:  26 February 2011

K. L. Kavanagh ,
J. C. P. Chang ,
D. Sadana  and
F. Cardone
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA. 92093–0407
J. C. P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA. 92093–0407
D. Sadana
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598.
F. Cardone
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598.
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Abstract

GaAs has been encapsulated with sputter or electron-beam deposited, thin films of Si or SiGe and annealed in open tube oxygen ambients. The presence of oxygen increases the diffusivity of both Si or Ge in the substrate. Forming gas anneals reduce the diffusivity by orders of magnitude. The diffusivities are greater for sputtered films compared to electron-beam deposited material of the same thickness. And the diffusivity is greater for thicker films and for Ge-rich films whether sputtered or electron-beam deposited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 581
Copyright
Copyright © Materials Research Society 1992

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References

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