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Orientation-Dependent Dewetting of Patterned Thin Si Film on SiO2

Published online by Cambridge University Press:  01 February 2011

Erwan Dornel ,
J-C. Barbé ,
J. Eymery  and
F. de Crécy
Erwan Dornel
Affiliation:
[email protected], CEA-LETI, D2NT/LSCDP, 17, rue des Martyrs, Grenoble, N/A, 38054, France, +33438786532
J-C. Barbé
Affiliation:
[email protected], CEA/GRE, CEA-DRT-LETI, 17, rue des Martyrs, Grenoble, N/A, 38054, France
J. Eymery
Affiliation:
[email protected], CEA, DRFMC/SP2M équipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, 17, rue des Martyrs, Grenoble, N/A, 38054, France
F. de Crécy
Affiliation:
[email protected], CEA/GRE, CEA-DRT-LETI, 17, rue des Martyrs, Grenoble, N/A, 38054, France
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Abstract

The agglomeration of a Silicon On Insulator (001) film during a thermal annealing at 900°C and 950°C under hydrogenated atmosphere has been characterized by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). At this temperature, the Si faceting along {110}, {111} and {113} planes is interpreted by a surface energy anisotropy. The anisotropy of the diffusion coefficient is also revealed by the formation of Si line along the <510>, <110> and <100> directions. A mechanism of the pearling instability of the <510> lines is proposed.

Keywords

Sifilmannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A04-05
Copyright
Copyright © Materials Research Society 2006

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