Article contents
Optoelectronic Properties of Thin Amorphous and Micro-Crystalline p-Type Films Developed for Amorphous Silicon-Based Solar Cells
Published online by Cambridge University Press: 10 February 2011
Abstract
VIIF-PECVD at 110 MI-z was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and Voc similar to those of the reference solar cells deposited onto SnO2 coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10 percent lower than that of the reference cell indicating that further optimization is required.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
- 4
- Cited by