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Observation of the Full Interface of Multi-level Interconnects for Sub-Half-Micron Devices

Published online by Cambridge University Press:  10 February 2011

Y. Hirose ,
T. Katayama ,
N. Fujiki ,
T. Ohno ,
M. Sekine  and
H. Koyama
Y. Hirose
Affiliation:
Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center 4-1 Mizuhara Itami, Hyogo 664, Japan
T. Katayama
Affiliation:
Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center 4-1 Mizuhara Itami, Hyogo 664, Japan
N. Fujiki
Affiliation:
Mitsubishi Electric Corporation, Semiconductor Group
T. Ohno
Affiliation:
Mitsubishi Electric Corporation, Semiconductor Group
M. Sekine
Affiliation:
Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center 4-1 Mizuhara Itami, Hyogo 664, Japan
H. Koyama
Affiliation:
Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center 4-1 Mizuhara Itami, Hyogo 664, Japan
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1. abstract

In recent years, the problem of electrical resistance of vias and contact holes has become greater because a thin insulated layer formed at the interface of the hole has become a serious difficulty in the manufacture of ULSIs. In using conventional techniques of cross sectional analysis to examine the cause, only one cross section of the hole can be analyzed, therefore there is the problem that the two-dimensional interface layer formed cannot be analyzed exactly.

In this paper, we have developed a new observation method to inspect two dimensions of the layer formed locally at the interface of the holes. This new observation method gives the configuration, coverage, and element map of the interface layer because the full interface of holes can be inspected; therefore, the process margin can be discussed. The present technique is demonstrated in failure analysis of sub-half-micron vias filled with tungsten.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 235
Copyright
Copyright © Materials Research Society 1997

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References

1 Fukuda, N., Saito, T., Suzuki, Y., Fujiwara, T., Yamaguchi, H., and Owada, N., Proceedings of the 33th annual International Reliability Physics Symposium, 1995, p30.Google Scholar
2 Pantel, R., Mascarin, G., Gonchond, J.P., and Lafond, D., Quality and Reliability Engineering International, Vol.10, 1994, p319.Google Scholar
3 Le, T. T., Hoang, H. H., and Michlowsky, J., Proceedings of the 17th International Symposium for Testing & Failure Analysis, 1991, p129.Google Scholar
4 Hsu, L. L., Novo, R.A., and Lee, S. X., Proceedings of the 17th International Symposium for Testing & Failure Analysis, 1991, p409.Google Scholar
5 Graas, C. D., Le, H. A., McPherson, W., and Havemann, R. H., Proceedings of the 32nd annual International Reliability Physics Symposium, 1994, p173.Google Scholar
6 Wang, S. Q. and Schlueter, J., J. Vac. Sci. Technol. B14(3), 1996, p1837.Google Scholar