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Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers

Published online by Cambridge University Press:  01 February 2011

Gan Feng ,
Jun Suda  and
Tsunenobu Kimoto
Gan Feng
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
Jun Suda
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
Tsunenobu Kimoto
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
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Abstract

The extended defects, such as dislocations and in-grown stacking faults (IGSFs), in 4H-SiC epilayers have been detected and visualized by a non-destructive method, the micro photoluminescence (μ-PL) intensity mapping method, at room temperature. The one-to-one correspondence between the extended defects and the μ-PL mapping contrast has been successfully obtained. A threading dislocation corresponds to a dark circle with the reduced intensity in the μ-PL mapping image performed at 390 nm, while a basal plane dislocation dissociates into a single Shockley SF during the measurements. Three kinds of IGSFs have been identified in the samples. Each kind of IGSF shows the distinct PL emission located at 460 nm, 480 nm, and 500 nm, respectively. The shapes and distributions of IGSFs have also been profiled by μ-PL intensity mapping.

Keywords

defectsoptical propertiesmicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-02
Copyright
Copyright © Materials Research Society 2010

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