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Noise Spectra of Six Gey Bz:H Thermo-sensing Films for Micro-bolometers

Published online by Cambridge University Press:  31 January 2011

Andrey Kosarev
Affiliation:
[email protected]@gmail.com, Institute for Astrophysics, Optics and Electronics, Electronics, Puebla, Puebla, Mexico
Ismael Cosme
Affiliation:
[email protected], Institute for Astrophysics, Optics and Electronics, Electronics, Puebla, Puebla, Mexico
Alfonso Torres
Affiliation:
[email protected], Institute for Astrophysics, Optics and Electronics, Electronics, Puebla, Puebla, Mexico
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Abstract

Noise spectra in plasma deposited SixGeyBz:H thermo-sensing films for micro-bolometers have been studied. The samples were characterized by SIMS (composition) and conductivity (room temperature conductivity, activation energy) measurements. The noise spectra were measured in the temperature range from T= 300 K to T=400 K and in the frequency range from f=2 Hz to f=2×104 Hz. The noise spectra SI(f) for the samples Si0.11Ge0.88:H and Si0.04Ge0.71B0.23 can be described by SI(f) ˜ f– β with β = 1 and β = 0.4, respectively. For the sample Si0.06Ge0.67B0.26 two slopes were observed: in low frequency region f≤ 103 Hz β1= 0.7 and at higher frequencies f>103 Hz β2= 0.13. Increasing temperature resulted in an increase of noise magnitude and a change of β values. The latter depended on film composition. The correlation observed between noise and conductivity activation energies suggests that noise is due to bulk rather than interface processes. Noise spectrum of the thermo-sensing film Si0.11Ge0.88:H was compared with that for micro-bolometer structure with the same thermo-sensing film. The micro-bolometer structure showed higher noise value in entire frequency range that assumed additional processes inducing noise.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Tissot, J.L. and Rothan, F. Proc. SPIE, 3379, 139(1998).Google Scholar
2 Schimert, T. and Ratcliff, D. Proc. SPIE, 3577, 96(1999).Google Scholar
3 Torres, A. Kosarev, A. Garcia, M. L. Cruz, R. Ambrosio. J.Non-Cryst. Solids, 329, 179(2003).Google Scholar
4 Garcia, M. Ambrosio, R. Torres, A. Kosarev, A.. J.Non-Cryst. Solids, 338–340, 744(2004).Google Scholar
5 Kosarev, A. Moreno, M. Torres, A. Ambrosio, R.. Mater., Res., Symp., Proc., 910, 0910-A17-05 (2006).Google Scholar
6 Johanson, R. E. Guenes, M. Kasap, S. O.. IEE Proc.-Circuits Devices Syst., 149 (1), 68 (2002).Google Scholar
7 Ahmed, A. and Tait, R. N.. Infrared Physics and Technology, 46, 468(2005).Google Scholar
8 Moreno, M. M. Kosarev, A. Torres, A.J. and Cosme, I.. Mater. Res. Soc. Symp. Proc., 1066 1066-A18-05 (2008).Google Scholar
9 Moreno, M. Kosarev, A. Torres, A. Ambrosio, R.. Int. J. High Speed Electronics and Systems, 18 (4) 1045 (2008).Google Scholar