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Multiscale Simulations of the RF Diode Sputtering of Copper

Published online by Cambridge University Press:  10 February 2011

H. N. G. Wadley ,
W. Zou ,
X. W. Zhou ,
J. F. Groves ,
S. Desa ,
R. Kosut ,
E. Abrahamson ,
S. Ghosal ,
A. Kozak  and
D. X. Wang
H. N. G. Wadley
Affiliation:
Intelligent Processing of Materials Laboratory Department of Materials science and Engineering University of Virginia, Charlottesville, VA 22903
W. Zou
Affiliation:
Intelligent Processing of Materials Laboratory Department of Materials science and Engineering University of Virginia, Charlottesville, VA 22903
X. W. Zhou
Affiliation:
Intelligent Processing of Materials Laboratory Department of Materials science and Engineering University of Virginia, Charlottesville, VA 22903
J. F. Groves
Affiliation:
Intelligent Processing of Materials Laboratory Department of Materials science and Engineering University of Virginia, Charlottesville, VA 22903
S. Desa
Affiliation:
SC Solutions Santa Clara, CA 95054
R. Kosut
Affiliation:
SC Solutions Santa Clara, CA 95054
E. Abrahamson
Affiliation:
SC Solutions Santa Clara, CA 95054
S. Ghosal
Affiliation:
SC Solutions Santa Clara, CA 95054
A. Kozak
Affiliation:
SC Solutions Santa Clara, CA 95054
D. X. Wang
Affiliation:
Nonvolatile Electronics, Inc. Eden Prairie, MN 55344-3617
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Abstract

The morphology and microstructure of RF diode sputter deposited materials is a complicated function of many parameters of the reactor operating conditions. Using a combination of computational fluid dynamics (CFD), RF plasma, molecular dynamics (MD) sputter, and direct simulation Monte Carlo (DSMC) transport models, a multiscale approach has been used to analyze the RF diode sputtering of copper. The CFD model predicts the velocity and pressure distribution of the working gas flows in the deposition chamber. The plasma model uses these CFD results to compute ion energies and fluxes at the target and substrate. The MD model of sputtering is used to determine the initial energy distribution of sputtered atoms and reflected neutral working gas atoms and both of their angular distributions. A DSMC transport model then deduces the target atom deposition efficiency, the spatial distribution of the film thickness, the target and reflected neutral atoms energy and impact angle distributions given reactor operating input conditions such as background pressure, temperature, gas type, together with the reactor geometry. These results can then be used in atomistic growth models to begin a systematic evaluation of surface morphology, nanoscale structure, and defects dependences upon the reactor design and its operating conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 323
Copyright
Copyright © Materials Research Society 1999

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