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Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures

Published online by Cambridge University Press:  22 February 2011

Y. H. Xie ,
E. A. Fitzgerald ,
Y. J. Mii ,
D. Monroe ,
F. A. Thiel ,
B. E. Weir  and
L. C. Feldman
Y. H. Xie
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
E. A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Y. J. Mii
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
D. Monroe
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
F. A. Thiel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

We report the fabrication of modulation doped Si/Gex Si1−x heterostructures by molecular beam epitaxy. The samples are characterized by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy, electron beam induced current, Hall measurement, and the magnetoresistance (Shubnikov-de Haas) measurements. Threading dislocation densities of = 106cm−2 are observed for relaxed Ge0.3Si0.7 films on Si (100). The modulation doped structures fabricated on these Ge0.3 Si0.7 films contain two-dimensional electron gases with mobilities ranging from 60,000 to 96,000 cm2/V - s at 4.2 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 413
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] “Submicron Integrateti Circuits”, Watts, R. K, Edit, Wiley-Interscience, New York, (1989);Google Scholar
[2] Liu, R. and Ng, K. K., private communication;Google Scholar
[3] Kukushkin, I. V., and Timofeev, V. B., Sov. Phys. JETP, 67. 594 (1988);Google Scholar
[4] Pfeiffer, L., West, K. W., Stormer, H. L., and Baldwin, K. W., Appl. Phys. Lett., 55, 1888 (1989);Google Scholar
[5] Esaki, L., and Tsu, R., Internal Report RC 2418, IBM Research, March 26, 1969;Google Scholar
[6] Fitzgerald, E. A., Xie, Y. H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y. J., and Weir, B. E., to be published in Appl. Phys. Lett.Google Scholar
[7] Bardeen, J., and Shockley, W., Phys. Rev., 80, 72, (1950);Google Scholar
[8] Sze, S. M., <Physics of Semiconductor Devices>, 2nd Ed., Appendix G, Wiley and Sons, New York, (1981).Google Scholar
[9] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., and Herzog, H. J., Phys. Rev. Lett. 54, 2441 (1985).CrossRefGoogle Scholar