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Modelling Heteroface of P.I.N Solar Cells for Improving Stability

Published online by Cambridge University Press:  16 February 2011

A. Fantoni ,
M. Vieira  and
R. Martins
A. Fantoni
Affiliation:
Cemop/Uninova/Fct-Unl, Quinta Da Torre, 2825 Monte Da Caparica, Portugal
M. Vieira
Affiliation:
Cemop/Uninova/Fct-Unl, Quinta Da Torre, 2825 Monte Da Caparica, Portugal
R. Martins
Affiliation:
Cemop/Uninova/Fct-Unl, Quinta Da Torre, 2825 Monte Da Caparica, Portugal
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Abstract

The introduction into a traditional p.i.n structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (“i'-layer”), grown at a higher power density, present a high density of defects and acts as “gettering centers” able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV−1 cm−3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution.

We report here about a device numerical simulation that allows us to analyse the influence of the “i'-layer” position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation from the ASCA program (AMorphous Solar Cell Analysis), and for different configurations will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 711
Copyright
Copyright © Materials Research Society 1994

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References

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