Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:30:02.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection

Published online by Cambridge University Press:  15 February 2011

A. Hassein-Bey  and
S. Cristoloveanu
A. Hassein-Bey
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, BP 257, 38016 Grenoble Cedex, France
S. Cristoloveanu
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, BP 257, 38016 Grenoble Cedex, France
Get access

Abstract

The influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 247
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Haddara, H. and Cristoloveanu, S., IEEE Trans. Electron Dev., ED-34, p.378 (1987).Google Scholar
2. Haddara, H. and Cristoloveanu, S., Sol. St. Electron., vol.31, p. 1573 (1988).Google Scholar
3. Hassein-Bey, A. and Cristoloveanu, S., proceeding of Insulating Film On Semiconductors, edited by IOP Publishing Limited Of Techno House (in press).Google Scholar
4. Hsu, F.-C and Tam, S., IEEE Electron. Dev. Lett., EDL-5, p.50 (1984).Google Scholar
5. Hao, Chu et al, Sol. St. Electron., vol.28, p. 1025 (1985).Google Scholar
6. Ghibaudo, G., Electronics Lett, vol.24, p. 543 (1988).Google Scholar