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Model for Heteroepitaxy on Patterned Substrates

Published online by Cambridge University Press:  28 February 2011

Y. C. Kao  and
K. L. Wang
Y. C. Kao
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

In this work, a new model based on energy balance for heteroepitaxial growth on a patterned substrate and an additional thin buffer layer on top of it has been developed. The structure used in our model is assumed to be GeSi/buffer-Si/patterned-Si and comparisons are made with simple crystalline GeSi/Si. However, the model described here is quite general and can be adopted for any other material systems. Using this model, coupled with experimentally known material constants, the critical layer thickness (hc) of a lattice mismatched heterolayer can be determined for a patterned substrate, having a characteristic “seed pads” size (l), and a buffer layer thickness (hb). The dislocation-free condition under this case is also established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 71
Copyright
Copyright © Materials Research Society 1988

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References

[1] Luryi, S. and Suhir, E., Appl. Phys. Lett. 49, 140 (1986).CrossRefGoogle Scholar
[2] Lin, T. L., Ph.D. Thesis, University of California, Los Angeles, 1987.Google Scholar
[3] Kao, Y. C., Wang, K. L., Wu, B. J., Lin, T. L., Nieh, C. W., Jamieson, D., and Bai, G., Appl. Phys. Lett 51, 1809 (1987).Google Scholar
[4] Lin, T. L., Sadwick, L., Wang, K. L., Rhee, S. S., Kao, Y. C., Hull, R., Nieh, C. W., Jamieson, D. N., and Liu, J. K., Appl. Phys. Lett 51, (1987).Google Scholar
[5] Merwe, J. H. Van der, J. Appl. Phys. 34, 123 (1962).Google Scholar
[6] People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985).CrossRefGoogle Scholar
[7] People, R. and Bean, J. C., Appl. Phys. Lett. 49, 229(E) (1986).Google Scholar
[8] Suhir, E., J. Appl. Mech. 53, 657 (1986).CrossRefGoogle Scholar