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Mocvd as a Technique for the Growth of CdTe/CdS Solar Cells

Published online by Cambridge University Press:  10 February 2011

R. A. Berrigan ,
S. J. C. Irvine ,
A. Stafford ,
D. Ellis  and
D. J. Colehamilton
R. A. Berrigan
Affiliation:
Optoelectronic Materials Research Laboratory, North East Wales Institute, Plas Coch, Wrexham, LL 11 2AW, UK
S. J. C. Irvine
Affiliation:
Optoelectronic Materials Research Laboratory, North East Wales Institute, Plas Coch, Wrexham, LL 11 2AW, UK
A. Stafford
Affiliation:
Optoelectronic Materials Research Laboratory, North East Wales Institute, Plas Coch, Wrexham, LL 11 2AW, UK
D. Ellis
Affiliation:
Department of Chemistry, University of St. Andrews, North Huagh, St. Andrews, Fife KY16 9ST, UK
D. J. Colehamilton
Affiliation:
Department of Chemistry, University of St. Andrews, North Huagh, St. Andrews, Fife KY16 9ST, UK
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Abstract

The MOCVD growth of cadmium sulphide on indium tin oxide (ITO) coated glass is investigated in this work. Optimum transmission characteristics and grain size are observed for films grown at 290° C at VI/MI ratios of 1–1.5. It is postulated that the nucleation delay observed during in situ growth monitoring via laser interferometry s a critical step in acieving these results. The nucleation delay is noted to vary with temperature and also VI/II ratio, allowing the rationalisation of the resulting film quality in terms of this observation. Structural analysis indicates polycrystalline CdS of hexagonal phase of (100) preferred orientation. Results of preliminary doping studies indicate that CdS can be n-type doped during growth with nbutylchloride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 191
Copyright
Copyright © Materials Research Society 1998

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