Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:44:26.211Z Has data issue: false hasContentIssue false
  • English
  • Français

The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects

Published online by Cambridge University Press:  10 February 2011

Paul R. Besser ,
John E. Sanchez Jr ,
David P. Fields ,
Shekhar Pramanick  and
Kashmir Sahota
Paul R. Besser
Affiliation:
Ad vaneed Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
John E. Sanchez Jr
Affiliation:
Materials Science Department, University of Michigan, Ann Arbor, MI
David P. Fields
Affiliation:
TexSEM Laboratories, Inc., Provo, UT
Shekhar Pramanick
Affiliation:
Technology Reliability Development, Advanced Micro Devices, Sunnyvale, CA
Kashmir Sahota
Affiliation:
Ad vaneed Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
Get access

Abstract

Novel metal deposition stack and damascene processing methods have been used to fabricate electrically isolated parallel arrays of 1.0 μm deep aluminum-alloy interconnect trenches varying in width from 0.5 μm to 16 μm. The grain size and crystallographic texture of the Al in these trenches has been characterized using transmission electron microscopy (TEM) and local electron backscattered diffraction (EBSD), respectively. Narrow lines (0.5 and 1.0 μm wide) have a bamboo microstructure, intermediate widths (2.0 μm wide) are nearly bamboo, and wide lines (4.0 μ and wider) are polycrystalline. The <111> texture of the lines degrades with decreasing linewidth. A secondary <100> component is demonstrated and its origin proposed. The electromigration reliability of the narrow damascene Al lines was measured, and the observed enhancement of damascene Al interconnects compared to conventionally-fabricated Al interconnects is correlated with the microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 217
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kikuta, K., Nakajima, T., Ueno, K., and Kikkawa, T., IEEE Proc. IEDM, p.285 (1993).Google Scholar
2. Kaanta, C., Bombaardier, S., Cote, W., Hill, W., Kerszykowski, G., Landis, H., Poindexter, D., Pollard, C., Ross, G., Ryan, J., Wolff, S., Cronin, J., Proc. VLSI Multilevel Interconnects Conference, p. 144 (1991).Google Scholar
3. Licata, T., Okazaki, M., Ronay, M., Landers, W., Ohiwa, T., Powtzlberger, H., Aochi, H., Dobuzinsky, D., Filippi, R., Restaino, D., Knorr, D., and Ryan, J., Proc. VLSI Multilevel Interconnects Conference, p. 596 (1995).Google Scholar
4. Xu, Z., Kieu, H., Yao, T., and Raaijmakers, I.J., Proc. VLSI Multilevel Interconnection Conf., p.158 (1994).Google Scholar
5. Chiang, E.J.H., Wang, K.C., Lee, D., Carmody, J., Hofman, V., and Helms, H. Jr, Proc. VLSI Multilevel Interconnection Conf., p.201 (1994).Google Scholar
6. Zhao, B., Ta, O., and Ting, C.H., Conf. Proc. 1994 ULSI-X of Advanced Metallization for ULSI Applications, p. 511 (1995).Google Scholar
7. Besser, P. R., Sanchez, J.E., and Field, D.P., To be published in Proc. Advanced Metallization and Interconnect Systems for ULSI Appl, in 1996 (October, 1996).Google Scholar
8. Rändle, V., Microtexture Determination and its Applications, Inst. of Metals (1992).Google Scholar
9. Rodbell, K.P., Hurd, J., and DeHaven, P., Mat. Res. Soc. Symp. Proc. 403 (1996).Google Scholar
10. Field, D.P. and Dingley, D.J., Solid State Technology, 38(11), p. 41 (1995).Google Scholar
11. Venables, J.A. and Harland, C.J., Phil. Mag. 27, p. 1193 (1973).Google Scholar
12. Dingley, D.J. and Baba-Kishi, K., Scanning Electron Microscopy, IL p. 383 (1986).Google Scholar
13. Knorr, D.B., Rodbell, K.P., and Tracy, D.P., Mat. Res. Soc. Symp. Proc. 225, p. 21 (1991)Google Scholar
14. Knorr, D.B., Mat. Res. Soc. Symp. Proc. 309, p. 75 (1991).Google Scholar
15. Thompson, C.V., Ann. Rev. Materials Sci. 20, p. 245 (1990).Google Scholar
16. Foilies, S.M., Baskes, M.I., and Daw, M.S., Phys. Rev. B 33, p. 7983 (1986).Google Scholar
17. McLean, M. and Gale, B., Phil. Mag. 20, p. 1033 (1969).Google Scholar
18. Vaidya, S. and Sinha, A.K., Thin Solid Films 75, p. 253 (1981).Google Scholar
19. Vaidya, S., Sheng, T., and Sinha, A.K., Appl. Phys. Lett. 36(6), p. 464 (1980).Google Scholar