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Measurement and Modeling of a-Si,Ge:H Solar Cell Performance After High-Intensity Light Soaking

Published online by Cambridge University Press:  01 January 1993

K. Vasanth ,
M. Nakata ,
S. Wagner  and
M. Bennett
K. Vasanth
Affiliation:
Department of Electrical Engineering, Princeton University,Princeton, NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division,Newtown,PA 18940
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Abstract

For a-Si:H solar cells a clear correlation exists between the defect density in the i-layer and cell performance. For cells with a-Si,Ge:H alloy, i-layers, on the other hand, the effect of the properties of the i-layer and its interfaces on cell performance is under debate. To address these questions we light-soaked to saturation and measured a-Si,Ge:H films and cells, and numerically modeled the cell performance using film properties as model inputs. We study three cells with the structure Glass/textured SnO2/p+ a-Si,C:H/i a-Si,Ge:H/n+ a-Si:H/ZnO/Ag. The i-layers are of uniform composition, 150 nm thick and have Tauc gaps of .1.40, 1.46 and 1.50 eV. We modeled the cells with AMPS, a numerical model solving the Poisson equation and the continuity equations for electrons and holes. The defect density in the 1.40 eV film stays constant during light soaking, while the densities in the 1.46 eV and 1.50 eV films rise. The efficiency of the 1.40 eV i-layer cell stays constant, while it drops in the cells with the 1.46 eV and 1.50 eV i-layers. Using the currently accepted input parameters to the model, we obtain cell performances substantially above the experimentally observed values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 827
Copyright
Copyright © Materials Research Society 1993

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References

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