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Materials Problems Affecting Reliability and Yield of Wire Bonding in VLSI Devices

Published online by Cambridge University Press:  21 February 2011

George G. Harman  and
Charles L. Wilson
George G. Harman
Affiliation:
National Institute of Standards & Technology Gaithersburg, Maryland 20899
Charles L. Wilson
Affiliation:
National Institute of Standards & Technology Gaithersburg, Maryland 20899
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Abstract

Materials problems have always been a significant cause of wire bond failures in microelectronics. However, modern VLSI materials, processing, and packaging methods combined often result in new or masked versions of old failure mechanisms. This paper describes the classical Au-Al intermetallic compound problem as described by a new two-dimensional finite element diffusion model and demonstrates that diffusion in poor welds is more rapid than in bulk couples. Failures resulting from modern bonding material couples (e.g., Cu-Au, Al-Ag, etc.) can result in bond failures superficially resembling Au-Al type failures. Failures resulting from bonds made to contaminated gold electroplated films are described, and a new failure model resulting from hydrogen in these films is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 154: Symposium K – Electronic Packaging Materials Science IV , 1989 , 401
Copyright
Copyright © Materials Research Society 1989

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