Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:18:13.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Manufacturability Versus Reliability Issues Relevant to Interconnect Metallizations.

Published online by Cambridge University Press:  25 February 2011

K.P. Rodbell ,
E.G. Colgan  and
C-K. Hu
K.P. Rodbell
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598; IBM Microelectronics Division, East Fishkill, NY 12533
E.G. Colgan
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598; IBM Microelectronics Division, East Fishkill, NY 12533
C-K. Hu
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598; IBM Microelectronics Division, East Fishkill, NY 12533
Get access

Abstract

Interconnections on silicon-based integrated circuits are almost exclusively aluminum alloys (Al-Si, Cu and various other solutes, e.g., Pd, Sc). The effects of film microstructure (grain size, grain size distribution, crystallographic texture and precipitate distribution) on the reliability of single level Al metallization has been well established. The final film microstructure obtained is dependent on both the deposition conditions and the thermal history during the manufacturing process. This paper will consider the role of microstructure in multi-level interconnects consisting of (1) AI(Cu) lines (in SiO2) with W and/or AI(Cu) studs and (2) an all Cu/polyimide multi-level structure. Methods for microstructure optimization during manufacturing of both Al and Cu based multilevel structures are explored. The variables important in determining the reliability of submicrometer single level versus multi-level structures and reliability testing methods (e.g., samples with versus without reservoirs and wafer level techniques) will be reviewed. Two relevant questions raised are; (1) What can be done during manufacturing to "build-in" reliability?, and (2) What are the trade-offs between manufacturing complexity (i.e., cost) and inherent reliability?

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 59
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Scorzoni, A., Neri, B., Caprile, C. and Fantini, F., Materials Sci. Rep., 7, 143 (1991).Google Scholar
2 Root, B.J. and Turner, T., Proc. of 23rd Intl. Rel. Phys. Symp., Orlando (IEEE, New York 1985) p.100.Google Scholar
3 Hong, C.C. and Crook, D.L., ibid., p. 119.Google Scholar
4 Jones, R.E. and Smith, L.D., J. Appl. Phys., 61. 4670 (1987).Google Scholar
5 Pasco, R.W. and Schwarz, J.A., Solid State Elec, 26, 445 (1983).Google Scholar
6 Suehle, J.S. and Schafft, H.A., Microelectron. Reliab., 32, 1527 (1992).Google Scholar
7 Tao, J., Young, K.K., Cheung, N.W. and Hu, C., IEEE Trans. Elec. Dev., 40, 1398 (1993).Google Scholar
8 Vossen, J.L., Appl. Phy. Lett., 23, 287 (1973).Google Scholar
9 Koch, R.H., Lloyd, J.R. and J. Cronin, Phys. Rev. Lett., 55, 2487 (1985).Google Scholar
10 Tobias, P.A. and Trindale, D., Applied Reliability, (Van Nostrand Reinhold, New York 1986), p. 140.Google Scholar
11 Lytle, S.A. and Oates, A.S., J. Appl. Phys., 71. 174 (1992).Google Scholar
12 Sullivan, T.D. and Miller, L.A., Materials Reliability Issues in Microelectronics III(Mater. Res. Soc., 309, Pittsburgh, PA, 1993) p. 169.Google Scholar
13 Kwok, T. and Ho, P.S. in Diffusion Phenomena in Thin Films and Microelectronic Materials edited by Gupta, D. and Ho, P.S. (Noyes Publications, Park Ridge, NJ 1988), p. 369.Google Scholar
14 Ames, I., d’Heurle, F.M. and Horstmann, R.E., IBM J. Res. Develop. 14. 461 (1970).CrossRefGoogle Scholar
15 Howard, J.K. and Ho, P.S., U.S. Patent No. 4 017 890 (12 April 1977).Google Scholar
16 Howard, J.K., White, J.F. and Ho, P.S., J. Appl. Phys., 49, 4083 (1978).Google Scholar
17 Gardner, D.S., Michalka, T.L., Saraswat, K.C., Barbee, T.W., McVittie, J.P. and Meindl, J.D., IEEE Electron Devices, ED-32,. (1985).Google Scholar
18 Gardner, D.S., Saraswat, K., Barbee, T.W., U.S. Patent No. 4 673 623 (16 June 1987).Google Scholar
19 Geffken, R.M., Ryan, J.G. and Slusser, G.J., IBM J. Res. Dev., 31. 608 (1987).Google Scholar
20 Slusser, G.J., Ryan, J.G., Shore, S.E., Lavoie, M.A. and Sullivan, T.D., J. Vac. Sci. Technol., A7,1568 (1989).Google Scholar
21 Rodbell, K.P., Dehaven, P.W. and Mis, J.D., in Materials Reliability Issues in Microelectronics (Mater. Res. Soc., 225, Pittsburgh, PA, 1991) p.91.Google Scholar
22 Rodbell, K.P., Totta, P.A. and White, J.F., U.S. Patent No. 5 071 714 (10 December 1991).Google Scholar
23 Lee, C.C., Machlin, E.S. and Rathore, H., J. Appl. Phys. 71, 5877 (1992).Google Scholar
24 Shibata, H., Murota, M. and Hashimoto, K., Jpn. J. Appl. Phys., 32, 4479 (1993).Google Scholar
25 Jawarani, D., Stark, J.P., Kawasaki, H., Ofowolafe, J.O., Lee, C.C., Klein, J. and Pintchovski, F., J. Electrochem. Soc., 747, 302 (1994).Google Scholar
26 Onuki, J., Koubuchi, Y., Fukada, S., Suwa, M., Misawa, Y. and Itagaki, T., IEDM (IEEE, New York, 1988), p.454.Google Scholar
27 Onuki, J., Koubuchi, Y., Suwa, M., Koizumi, M., Garder, D.S., Suzuki, H. and Minowa, E., IEEE Transactions on Electron Devices, 39, 1322 (1992).Google Scholar
28 Rodbell, K.P., Knorr, D.B. and Mis, J.D., Electron, J.. Mater., 22. 597 (1993).Google Scholar
29 Dirks, A.G. and Augur, R.A., Appl. Phys. Letters, 64, 704 (1994).Google Scholar
30 Ogawa, J. and Nishimura, H., IEDM (IEEE, New York, 1991), 277.Google Scholar
31 Hara, T., Hosoda, N., Nagano, S. and Ueda, T., Jpn. J. Appl. Phys., 32, 1395 (1993).Google Scholar
32 Licata, T.J., Sullivan, T.D., Bass, R.C., Ryan, J.G. and Knorr, D.B., Materials Reliability Issues in Microelectronics III (Mater. Res. Soc, 309, Pittsburgh, PA, 1993) p.87.Google Scholar
33 Rosenberg, R., J. Vac. Sci. Technol., 9, 263 (1972).Google Scholar
34 Frear, D.R., Michael, J.R. and Romig, A.D. Jr., Materials Reliability Issues in Microelectronics III (Mater. Res. Soc., 309, Pittsburgh, PA, 1993) p.359.Google Scholar
35 Frear, D.R., Sanchez, J.E., Romig, A.D., Morris, J.W. Jr., Metall. Trans., 21A 2449 (1990).Google Scholar
36 Colgan, E.G. and Rodbell, K.P., J. Appl. Phys., (1994) in press.Google Scholar
37 Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Transactions on Electron Device ED-34, 689 (1987).Google Scholar
38 Gardner, D.S. and Flinn, P.A., J. Appl. Phys., 67, 1831 (1990).Google Scholar
39 Venkatraman, R. and Bravman, J.C., Proceedings of the MRS Symposium on Thin Films: Stress and Mechanical Properties III, (MRS Publications, Pittsburgh, 1992)239, p. 127.Google Scholar
40 Knorr, D.B., Rodbell, K.P. and Tracy, D.P., Proceedings of the First MRS Symposium on Materials Reliability Issues in Microelectronics, (MRS Publications, Pittsburgh, 1991), 225. p.21.Google Scholar
41 Knorr, D.B., Tracy, D.P. and Rodbell, K.P., Appl. Phys. Lett, 59, 3241 (1991).Google Scholar
42 Knorr, D.B. and Rodbell, K.P. Proceedings of the Second MRS Symposium on Materials Reliability Issues in Microelectronics, (MRS Publications, Pittsburgh, 1992), 265, p.113.Google Scholar
43 Vaidya, S. and Sinha, A.K., Thin Solid Films 75, 253 (1981).Google Scholar
44 Rodbell, K.P., Knorr, D.B. and Tracy, D.P.. Proceedings of the Second MRS Symposium on Materials Reliability Issues in Microelectronics, (MRS Publications, Pittsburgh, 1992)265, p.107.Google Scholar
45 Campbell, A., Mikawa, R.E. and Knorr, D.B., Electron, J.. Mater., 22, 589 (1993).Google Scholar
46 Knorr, D.B. Materials Reliability Issues in Microelectronics III (Mater. Res. Soc., 309, Pittsburgh, PA, 1993) p.75.Google Scholar
47 Tracy, D.P., Knorr, D.B. and Rodbell, K.P., submitted to J. Appl. Phys. (1994).Google Scholar
48 Mondolfo, L.F., Aluminum Alloys: Structure and Properties , (Butterworths Publishers, London, 1976), p. 254.Google Scholar
49 Kwok, T., Tan, C., Moy, D., Estabil, J.J., Rathore, H.S. and Basavaiah, S., VMIC 90 in Proc. Int. IEEE VLSI Multilevel Interconnection Conf. (June 1990), 106.Google Scholar
50 Rathore, H.S., Filippi, R.G., Wachnik, R.A., Estabil, J.J. and Kwok, T., Proceedings of SPIE Conference: “Submicron Metallization: The Challenges, Opportunities, and Limitations”, San Jose, CA (IEEE 1805, New York 1992)p.251.Google Scholar
51 Park, C.W. and Vock, R.W., Appl Phys. Lett. 59, 175 (1991).Google Scholar
52 Tao, J., Cheung, N.W., Hu, C., Kang, H.K., Wong, S.S., IEEE Electron Device Lett. 13, 433 (1992).Google Scholar
53 Hu, C.-K., Small, M.B., and Ho, P.S., Materials Reliability Issues in Microelectronics II (Mater. Res. Soc., 265, Pittsburgh, PA, 1992) p.171.Google Scholar
54 Rodbell, K.P. and Koch, R.H., Physical Review B, 44, 1767 (1991).CrossRefGoogle Scholar
55 Nitta, T., Ohmi, T., Otsuki, M., Takewaki, T., Shibata, T., J. Electrochem. 139, 922 (1992).Google Scholar
56 Luther, B., et al. ., Proc. of 10th Int. IEEE VLSI Multilevel Interconnection Conference, Santa Clara (IEEE, New York 1993) p.15.Google Scholar
57 Paraszczak, J., Edelstein, D.. Cohen, S., Babich, E. and Hummel, J., Proc. of IEDM, (IEEE, New York 1993).Google Scholar