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Low‐temperature low‐stress silicon nitride for optoelectronic Applications prepared by electron cyclotron resonance plasma Chemical‐vapor deposition

Published online by Cambridge University Press:  10 February 2011

S. Belkouch ,
D. Landheer ,
R. Taylor ,
K. Rajesh  and
G. I. Sproule
S. Belkouch
Affiliation:
National Research Council of Canada., Institute for Microstructural Sciences, Ottawa, Ontario, Canada, K1A 0R6
D. Landheer
Affiliation:
National Research Council of Canada., Institute for Microstructural Sciences, Ottawa, Ontario, Canada, K1A 0R6
R. Taylor
Affiliation:
National Research Council of Canada., Institute for Microstructural Sciences, Ottawa, Ontario, Canada, K1A 0R6
K. Rajesh
Affiliation:
National Research Council of Canada., Institute for Microstructural Sciences, Ottawa, Ontario, Canada, K1A 0R6
G. I. Sproule
Affiliation:
National Research Council of Canada., Institute for Microstructural Sciences, Ottawa, Ontario, Canada, K1A 0R6
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Abstract

Silicon nitride films have been deposited with a single‐magnet electron‐resonance deposition system using nitrogen and silane as the reaction gases at substrate temperatures of 110°C and 300°C. The films are slightly nitrogen‐rich with no measurable Si‐H bonds measurable by Fourier Transform infrared spectroscopy and the concentration of hydrogen present as N‐H bonds increases with increasing SiH4/N2. The stress levels in the films can be controlled from tensile to compressive by decreasing the SiH4/N2 flow ratio and very low stress can be obtained with N‐H bond concentrations of 4 at. %. The optical bandgap for the layer with the lowest stress value (‐11.5 MPa), deposited at 300°C was 4.9 eV, as determined from a taue plot, and the waveguide loss at 632.8 nm was 2.3 dB/cm for 500 nm thick film deposited on fused silica.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 151
Copyright
Copyright © Materials Research Society 1997

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