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Light-Induced Changes in the Subgap Absorption of a-SiC:H

Published online by Cambridge University Press:  25 February 2011

M. S. Bennett ,
S. Wiedeman  and
K. Rajan
M. S. Bennett
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
S. Wiedeman
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
K. Rajan
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
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Abstract

The changes in the absorption spectra of a-SiC films of varying bandgap were monitored as a function of light-soaking time. It was found that the greatest change in absorption occurred at an energy which was 0.55eV less than the energy of the bandgap. It is demonstrated that this could result from a band of states which remain fixed in energy with respect to one of the band edges as the bandgap changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 577
Copyright
Copyright © Materials Research Society 1989

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References

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