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Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison.

Published online by Cambridge University Press:  10 February 2011

F. La Via ,
S. Privitera ,
M. G. Grimaldi ,
V. Raineri ,
M. Galli ,
F. Marabelli ,
M. Iannuzzil  and
L. Miglio
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 1-95121 Catania, Italy
S. Privitera
Affiliation:
Dipartimento di Fisica, Universita di Catania, and Istituto Nazionale per la Fisica della Materia, Corso Italia 57, 195129 Catania, Italy.
M. G. Grimaldi
Affiliation:
Dipartimento di Fisica, Universita di Catania, and Istituto Nazionale per la Fisica della Materia, Corso Italia 57, 195129 Catania, Italy.
V. Raineri
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 1-95121 Catania, Italy
M. Galli
Affiliation:
Dipartimento di Fisica, Universitni di Pavia, and Istituto Nazionale per la Fisica della Materia
F. Marabelli
Affiliation:
Dipartimento di Fisica, Universitni di Pavia, and Istituto Nazionale per la Fisica della Materia
M. Iannuzzil
Affiliation:
Dipartimento di Fisica, Universitt di Milano, and Istituto Nazionale per la Fisica della Materia
L. Miglio
Affiliation:
Dipartimento di Fisica, Universitt di Milano, and Istituto Nazionale per la Fisica della Materia
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Abstract

The kinetics of the C49-C54 polymorphic transformation in titanium disilicides thin films grown on amorphous Si substrate has been followed by sheet resistance and Infrared Spectroscopy measurements on both blanket samples and submicron lines. The transformation of a fine grained C49 films (davg=30 nm) into the C54 phase was complete after annealing for ∼300 s at a temperature of 700 °C in blanket samples and of 730 °C in submicron lines. The Avrami exponent decreases from n=3 in blanket films to n=l in stripes. The transformation time at a given temperature increases with decreasing linewidth in agreement with the nucleation density model. Infrared Spectroscopy shows no shift of the peaks of the C49 phonons going from blanket to patterned films, suggesting the lack of strain on TiSi2 patterned films. The different behavior between blanket and laterally limited samples has been explained in terms of the different surface energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 219
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1) Maex, K., Mater.Sci.Eng. R 11, 53 (1993)10.1016/0927-796X(93)90001-JGoogle Scholar
2) Osbum, C.M., Tsai, J.Y., and Sun, J., J. Electronic Mat. 25, 1725 (1996)Google Scholar
3) Jeon, Hyeongtag, Sokow, C.A., Honeycutt, J.W., Rozgonyi, G.A., and Nemanich, R.J., J. Appl. Phys. 71, 4269 (1992)10.1063/1.350808Google Scholar
4) Ma, Z., and Allen, L.H., Phys. Rev. B 49, 13501 (1994)Google Scholar
5) Roy, R.A., Clevenger, L.A., Cabral, C. Jr., Saenger, K.L., Brauer, S., Jordan-Sweet, J., Bucchignano, J., Stephenson, G.B., Morales, G., and Ludwig, K.F. Jr., Appl. Phys. Lett. 66, 1732 (1995)Google Scholar
6) Kittl, J.A., Prinslow, D.A., Apte, P.P., and Pas, M.F., Appl.Phys.Lett. 67, 2308 (1995)Google Scholar
7) Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J., IEEE Trans.Electron Devices ED–38, 262 (1991)10.1109/16.69904Google Scholar
8) Ma, Z., Allen, L.H., and Allman, D.D.J., J.Appl. Phys. 77, 4384 (1995)Google Scholar
9) Clevenger, L.A., Harper, J.M.E., Cabral, C., Nobili, C., Ottaviani, G., and Mann, R., J. Appl. Phys. 72, 4978 (1992)10.1063/1.352018Google Scholar
10) Mann, R.W., Clevenger, L.A., and Hong, Q.Z., J. Appl. Phys. 73, 3566 (1993)Google Scholar
11) Colgan, E.G., Clevenger, L.A., and Cabral, C. Jr., Appl. Phys. Lett. 65, 2009 (1994)10.1063/1.112846Google Scholar
12) Clevenger, L.A., Mann, R.W., Roy, R.A., Saenger, K.L., Cabral, C. Jr., and Piccirillo, J., J. Appl. Phys. 76, 7874 (1994)10.1063/1.357897Google Scholar
13) van Houtum, H.J.W., Raaijmakers, I.J.M.M., and Menting, T.J.M., J. Appl. Phys. 61, 3116 (1987)10.1063/1.337815Google Scholar
14) Christian, J.W., The Theory of Transformations in Metals and Alloys, Part I, 2nd ed. (Pergamon, Oxford, 1975)Google Scholar
15) Grimaldi, M.G., Via, F. La, Raineri, V., Boccelli, S., Galli, M., Marabelli, F., Bonoli, F., Iannuzzi, M., Miglio, L., Microelectronics Engineering, 37/38, 441 (1997).Google Scholar
16) Svilan, V., Rodbell, K.P., Clevenger, L.A., Cabral, C. Jr., Roy, R.A., Lavoie, C., Jordan-Sweet, J. and Harper, J.M.E., Mat. Res. Soc. Symp. Proc. Vol.427, 53 (1996).Google Scholar