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Kinetic Investigations of the Initial Oxidation Stage of Copper by In-Situ UHV-TEM

Published online by Cambridge University Press:  10 February 2011

J. C. Yang
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Blinois at Urbana-Champaign, Urbana, IL 61801
M. Yeadon
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Blinois at Urbana-Champaign, Urbana, IL 61801
B. Kolasa
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Blinois at Urbana-Champaign, Urbana, IL 61801
D. Olynick
Affiliation:
Applied Materials Inc., 3100 Bowers Ave., Santa Clara, CA 95054
J. M. Gibson
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Blinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

We have examined the nucleation and growth of copper oxides formed by in-situ oxidation of copper thin films inside a modified transmission electron microscope (TEM). Based on this data, we have developed a semi-quantitative model of the initial oxidation stage where the dominant mechanism for transport, nucleation and growth of oxide islands is oxygen diffusion on the surface. The copper oxide can be desorbed by annealing and introducing methanol vapor into the chamber. The clean copper film can be oxidized by introducing oxygen gas. Both the desorption and oxidation processes were observed by planar TEM techniques. The copper film was oxidized in-situ at a partial pressure of 5×104 torr. Cu2O islands, which formed epitaxially to the copper film, nucleated and grew into the copper film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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