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Ion Beam Synthesis Based Formation of Ge – Rich Thermally Grown Silicon Dioxide Layers: A Promising Approach for A Silicon - Based Light Emitter

Published online by Cambridge University Press:  17 March 2011

T. Gebel ,
L. Rebohle ,
J. Zhao ,
D. Borchert ,
H. Fröb ,
J.V. Borany  and
W. Skorupa
T. Gebel*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Bautzner Landstraße 45, D-01454 Dresden - Rossendorf, Germany
L. Rebohle
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Bautzner Landstraße 45, D-01454 Dresden - Rossendorf, Germany
J. Zhao
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
D. Borchert
Affiliation:
Fraunhofer Institut für Solare Energiesysteme, D-45884 Gelsenkirchen, Germany
H. Fröb
Affiliation:
TU Dresden, Institut für Angewandte Photophysik, D-01062 Dresden, Germany
J.V. Borany
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Bautzner Landstraße 45, D-01454 Dresden - Rossendorf, Germany
*
corresponding author: [email protected]
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Abstract

The development of novel devices for optical communication and integrated sensor applications is mainly focused on their possible integration into dedicated integrated circuits. The main problem concerning integrated optical systems in silicon technology has always been the formation of an highly efficient silicon-based light emitter which is a key feature to make a real step into the world of integrated optoelectronics.

One of the most promising approaches to form such a silicon based light emitter is ion beam synthesis. In this paper we will report our recent progress in extracting blue-violet (∼400 nm) electroluminescence (EL) from an ion beam synthesized Ge-rich silicon dioxide layer. The power efficiency of the EL was as high as 0.5 % which is one of the best values ever reported for Si - based light emission. The lifetime of the EL-device can reach several hours without special precautions of stabilizing the EL-active layer against ion or other contamination. Moreover, results are reported dedicated to the investigation of the excitation mechanism of this strong EL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F18.1.1
Copyright
Copyright © Materials Research Society 2001

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References

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