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Investigation of the Kinetics of Surface-Limited thin Film Growth of SiGe Alloys by CVD of Si2H6/Ge2 H6 Mixtures

Published online by Cambridge University Press:  22 February 2011

J. W. Sharp  and
Gyula Eres
J. W. Sharp
Affiliation:
Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37896–2200
Gyula Eres
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6056
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Abstract

The kinetics of surface-limited thin film growth of SiGe alloys was investigated by time-resolved surface differential reflectometry. The source gas, mixtures of disilane and digermane in ratios from 1:1 to 6:1 in helium carrier gas, was delivered to a heated Si(001) substrate by a fast-acting pulsed molecular jet valve. The adsorption and desorption kinetics were determined from the surface differential reflectance signal obtained using a polarized, high-stability HeNe probe laser. Thin film growth was studied in the temperature range of 400–600°C on Si(001) substrates. Preferential incorporation of digermane into the film produces an alloy composition that depends upon but does not mirror the gas composition. For all gas mixtures, there is a strong temperature dependence of the rate at which the adsorption layer decomposes into film plus by-product. The kinetic data and the alloy compositions provide a basis for deducing some of the characteristics of the reaction sequence that leads to SiGe alloy thin film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 433
Copyright
Copyright © Materials Research Society 1993

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References

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