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In-Situ Study of the Optoelectronic Properties of Very thin P-TYPE μc-Si:H Films and the Potential Profile at the p-(μc-Si:H)/i-(a-Si:H) Interface
Published online by Cambridge University Press: 10 February 2011
Abstract
In-situ UV-visible ellipsometry and Kelvin probe measurements were performed to study the growth of boron-doped microcrystalline silicon (μc-Si:H) thin films and the band profiling at the p- (μc-Si:H)/i-(a-Si:H) interface. The in-situ UV-visible spectroscopic ellipsometry measurements, combined with dark conductivity measurements, performed at different stages of the growth show that p-type μc-Si:H formation can be achieved for a film thickness below 10 nm. These analyses also reveal that both the optical absorption, and the dark conductivity do not change significantly for a crystalline volume fraction above 50%. Moreover, the contact potential as measured by in- situ Kelvin probe shows a saturation just after the percolation threshold. These results indicate that highly crystallized doped layers are not necessary in device applications. From the Kelvin probe measurements, the potential profile through the p-(μc-Si:H)/ i-(a-Si:H) interface was measured. The microcrystalline silicon p-layers were successfully incorporated in single junction solar cells.
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- Copyright © Materials Research Society 1998
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