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Initial Stage of InGaAs Growth on GaAs(100)

Published online by Cambridge University Press:  25 February 2011

D. Gerthsen ,
M. Lentzen  and
A. Förster
D. Gerthsen
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, Postfach 1913, D-W5170 JUlich, Germany
M. Lentzen
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, Postfach 1913, D-W5170 JUlich, Germany
A. Förster
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, Postfach 1913, D-WS170 JUlich, Germany
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Abstract

The growth mode and the relaxation of MBE grown InxGa1-xiAs layers (0.13 ≦ x ≦ 1.0, nominal film thickness 5 nm) on GaAs(100) substrates with a lattice-parameter mismatch were investigated by transmission electron microscopy (TEM). The transition between two- and three-dimensional growth occurs at x ≈ 0.4. The three-dimensional growth mode for x ≥ 0.6 results in a wide spectrum of island sizes. In contrast to the two-dimensional growth mode, the strain state of a three-dimensionally growing layer is completely inhomogeneous because the relaxation of the strain is correlated with the island size. The reduction of elastic strain for islands is reasonably described by an energy balance model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 409
Copyright
Copyright © Materials Research Society 1992

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References

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