Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-05T16:48:08.429Z Has data issue: false hasContentIssue false
  • English
  • Français

The Impact of Pregrowth Conditions and Substrate Polytype on SiC Epitaxial Layer Morphology

Published online by Cambridge University Press:  15 February 2011

A. A. Burk Jr ,
L. B. Rowland ,
G. Augustine ,
H. M. Hobgood  and
R. H. Hopkins
A. A. Burk Jr
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Rd., Pittsburgh PA USA 15235
L. B. Rowland
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Rd., Pittsburgh PA USA 15235
G. Augustine
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Rd., Pittsburgh PA USA 15235
H. M. Hobgood
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Rd., Pittsburgh PA USA 15235
R. H. Hopkins
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Rd., Pittsburgh PA USA 15235
Get access

Abstract

4H and 6H-SiC epitaxial layers exhibit characteristic morphological defects caused by process and substrate interferences with the a-axis directed step-flow growth. 4H-SiC is shown to typically exhibit worse morphology than 6H-SiC for a given off-axis orientation. SiC epitaxial layer defects are significantly reduced by the optimization of growth conditions and substrate surface preparation. The remaining highly variable defects are shown to emanate from the substrate surface with densities of ≥1000 cm−2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 275
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sriram, S., Clarke, R. C., Burk, A. A. Jr, Hobgood, H. M., McMullin, P. G., Orphanos, P. A., Siergiej, R. R., Smith, T. J., Brandt, C. D., Driver, M. C., and Hopkins, R. H., IEEE Electron Device Lett., EDL–15, 458 (1994).Google Scholar
2. Siergiej, R. R., Sriram, S., Clarke, R. C., Agarwal, A. K., Brandt, C. D., Burk, A. A. Jr, Smith, T. J., Morse, A, and Orphanos, P. A., Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto Japan 1995), p. 321.Google Scholar
3. Cree Research Inc., Durham, North Carolina.Google Scholar
4. Burk, A. A. Jr and Rowland, L. B., accepted for publication in J. Crystal Growth.Google Scholar
5. Powell, J. A., Larkin, D. J., and Abel, P. B., J. Electron. Mater. 24, 295 (1995).Google Scholar
6. Hallin, C., Konstantinov, A. O., Kordina, O., and Janzén, E., Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto Japan 1995), p. 35.Google Scholar
7. Carter, C. H. Jr and Tsvetkov, V. F., Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto Japan 1995), p. 11.Google Scholar
8. Kimoto, T., Itoh, A., and Matsunami, H., Appl. Phys. Lett. 66, 26 (1995).Google Scholar
9. Kuroda, N., Shibahara, K., Yoo, W. S., Nishino, S., and Matsunami, H., Ext. Abstr. of the 19th Conf. on Solid State Devices and Materials, (Tokyo Japan 1987), p.227.Google Scholar