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Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

Published online by Cambridge University Press:  26 February 2011

R. Rizk ,
P. De Mierry ,
D. Ballutaud ,
M. Aucouturier  and
D. Mathiot
R. Rizk
Affiliation:
Laboratoire de Physique des Solides de Bellevue - CNRS, 1 Place A. Briand - 92195 Meudon Cddex, France.
P. De Mierry
Affiliation:
Laboratoire de Physique des Solides de Bellevue - CNRS, 1 Place A. Briand - 92195 Meudon Cddex, France.
D. Ballutaud
Affiliation:
Laboratoire de Physique des Solides de Bellevue - CNRS, 1 Place A. Briand - 92195 Meudon Cddex, France.
M. Aucouturier
Affiliation:
Laboratoire de Physique des Solides de Bellevue - CNRS, 1 Place A. Briand - 92195 Meudon Cddex, France.
D. Mathiot
Affiliation:
CNET-CNS, BP 98 - 38243 Meylan Cddex, France.
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Abstract

Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 573
Copyright
Copyright © Materials Research Society 1991

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References

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