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How Surface Roughening and Dislocation Formation Mutually Influence Each Other During Heteroepitaxial Growth

Published online by Cambridge University Press:  15 February 2011

Silke Christiansen ,
M. Albrecht ,
H. Michler  and
H.P. Strunk
Silke Christiansen
Affiliation:
Universität Erlangen–Nürnberg, Institut für Werkstoffwissenschaften, LS VII, D-91058 Erlangen, F.R.G.
M. Albrecht
Affiliation:
Universität Erlangen–Nürnberg, Institut für Werkstoffwissenschaften, LS VII, D-91058 Erlangen, F.R.G.
H. Michler
Affiliation:
Universität Erlangen–Nürnberg, Institut für Werkstoffwissenschaften, LS VII, D-91058 Erlangen, F.R.G.
H.P. Strunk
Affiliation:
Universität Erlangen–Nürnberg, Institut für Werkstoffwissenschaften, LS VII, D-91058 Erlangen, F.R.G.
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Abstract

Using finite elements we quantitatively calculate the inhomogeneous strain distribution associated with the so called crosshatch pattern. This pattern is a twodimensional, pseudoregular surface undulation that generally arises as an intermediate stage of heteroepitaxial growth of low misfitting semiconductor layers. This stage is characterized by an interplay of elastic and plastic relaxation processes. The calculations yield (i) the elastic strain energy density distribution and corresponding degree of elastic relaxation and (ii) the shear stress distribution in the glide system, in which misfit dislocations form. As a main result shear stresses due to the crosshatch pattern within the substrate are identified that cause misfit dislocations to multiply in the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 357
Copyright
Copyright © Materials Research Society 1995

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References

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