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High Resolution Tem Studies of Solid-Phase Epitaxial Si at Contact Holes Through Al-Si Alloy

Published online by Cambridge University Press:  21 February 2011

Norio Hirashita ,
Masako Kinoshita  and
Tsuneo Ajioka
Norio Hirashita
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
Masako Kinoshita
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
Tsuneo Ajioka
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
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Abstract

Microstructural studies of Si precipitated on contact holes through Al-Si alloy has been carried out for 1-Mbit DRAMs using cross-sectional transmission electron microscopy and X-ray microanalysis. Lattice images reveal the perfect epitaxial growth of Si on Si substrates at contacts through Al-Si alloy at temperatues ≤420°C. At the interface between substrates and the solid-phase epitaxial Si, ellipsoidal micro-defects, associated with amorphous oxygen-rich materials containing Al, are observed. In the epitaxial Si evidence of dislocations and twins is found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 381
Copyright
Copyright © Materials Research Society 1989

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References

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