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High Performance Thin Film Transistors for Scanner Applications

Published online by Cambridge University Press:  21 February 2011

B.-C. Hseih ,
G.A. Hawkins  and
S. Ashok
B.-C. Hseih
Affiliation:
Electronics Research Laboratory, Eastman Kodak Company, Rochester, NY. 14650-2019
G.A. Hawkins
Affiliation:
Electronics Research Laboratory, Eastman Kodak Company, Rochester, NY. 14650-2019
S. Ashok
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA. 16802
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Abstract

We report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 369
Copyright
Copyright © Materials Research Society 1990

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