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High Dielectric Constant Hf-Ti-Sn-O Off-Axis Cosputtered Films

Published online by Cambridge University Press:  10 February 2011

L. F. Schneemeyer ,
R. B. van Dover  and
R. M. Fleming
L. F. Schneemeyer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. B. van Dover
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. M. Fleming
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/µm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr=19 µC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7- 10−6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 567
Copyright
Copyright © Materials Research Society 1999

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References

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