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High Carrier Concentration Improved N-Type SiGe/GaP Alloys

Published online by Cambridge University Press:  15 February 2011

A. Nancy Scoville ,
Clara Bajgar ,
Jan Vandersande  and
Jean-Pierre Fleurial
A. Nancy Scoville
Affiliation:
Thermo Electron Technologies Corporation, 85 First Ave., Waltham, MA 02254
Clara Bajgar
Affiliation:
Thermo Electron Technologies Corporation, 85 First Ave., Waltham, MA 02254
Jan Vandersande
Affiliation:
Jet Propulsion Laboratory, 4800 Oak Grove Dr., Pasadena, CA 91109
Jean-Pierre Fleurial
Affiliation:
Jet Propulsion Laboratory, 4800 Oak Grove Dr., Pasadena, CA 91109
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Abstract

SiGe alloys have been fabricated with the hiqghest carrier concentrations achieved to date. Values in excess of 4.0 × 1020 have been observed. The thermoelectric behavior of these samples has been characterized, both in the as-pressed state and as a function of 3anneal time and temperature. Figures-of-merit between 0.85 and 0.90 × 10−3 K−1 have been reproducibly achieved. Further improvements will be achieved by reducing the carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 117
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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