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Formation of Transparent SiO2 Thin Film at Room Temperature with Excimer Lamp Irradiation

Published online by Cambridge University Press:  10 February 2011

T. Okamoto ,
H. Iizuka ,
S. Ito  and
M. Murahara
T. Okamoto
Affiliation:
Faculty of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
H. Iizuka
Affiliation:
Faculty of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
S. Ito
Affiliation:
Faculty of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
M. Murahara
Affiliation:
Faculty of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
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Abstract

A transparent SiO2 thin film was grown with Xe2* excimer lamp and NF3, O2 mixed gases at room temperature. Unlike the conventional methods such as atomic layer epitaxy (ALE) at low temperature, this method requires only a few minutes for deposition without changing material gases. A Si substrate was placed in a reaction chamber, which was filled with NF3 and O2 gases. The gases were exposed to the Xe2* excimer lamp light, and SiF4 and NO2 were produced by photochemical reaction. The SiF4 was adsorbed on the substrate; which reacted with NO2 in gas ambient and was oxidized to form SiO2. The molecular layer was produced per reaction, and by voluntarily repeated reaction, the transparent SiO2 thin film was grown. As a result, the SiO2 film thickness of about 2200 Å was achieved for 15 minutes at room temperature. By annealing the formed SiO2 film, the surface current density of the formed SiO2 decreased; the higher the annealing temperature became, the more the surface density decreased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 401
Copyright
Copyright © Materials Research Society 1998

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References

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