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Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Published online by Cambridge University Press:  15 February 2011

J. Cardenas ,
S.-L. Zhang ,
B. G. Svensson  and
C. S. Petersson
J. Cardenas
Affiliation:
Royal Institute of Technology, Solid State Electronics P. O. Box Electrum 229, S-164 40 Kista, Stockholm, Sweden
S.-L. Zhang
Affiliation:
Royal Institute of Technology, Solid State Electronics P. O. Box Electrum 229, S-164 40 Kista, Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics P. O. Box Electrum 229, S-164 40 Kista, Stockholm, Sweden
C. S. Petersson
Affiliation:
Royal Institute of Technology, Solid State Electronics P. O. Box Electrum 229, S-164 40 Kista, Stockholm, Sweden
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Abstract

The redistribution of titanium during the growth of epitaxial CoSi2 from the reaction of Co(20nm)/Ti(lOnm)/Si<100> structures has been investigated. The concentration of Ti in the CoSi2 layers versus annealing temperature has been determined. Emphasis is placed on the formation of inhomogeneities in the epitaxial CoSi2 layers, and the role of Ti with respect to the thermal stability of the layers. The fundamental mechanism for the development of inhomogeneities in the epitaxial CoSi2 layers will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 155
Copyright
Copyright © Materials Research Society 1996

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References

1. Wei, C. -S., Fraser, D. B., Dass, M. L. A., and Brat, T., in VI International IEEE VLSI Multilevel Interconnection conference, Santa Clara, CA, p.241 (1989).Google Scholar
2. Yang, H.-Y. and Bene, R. W., J. Appl. Phys. 59, 1525 (1986).Google Scholar
3. Zhang, S.-L., Cardenas, J., d'Heurle, F. M., Svensson, B. G., and Petersson, C. S., Appl. Phys. Lett. 66, 58 (1995).Google Scholar
4. Cardenas, J., Hatzikonstantinidou, S., Zhang, S.-L., Svensson, B. G., and Petersson, C. S., Physica Scripta, T54, 198 (1994).Google Scholar
5. Ogawa, S., Fair, J. A., Dass, M. L. A., Jones, E. C., Kouzaki, T., Cheung, N. W. and Frazer, D. B., in International Conference on Solid State Devices and Materials, Makuhari Messe, Chiba, Japan, p. 195 (1993).Google Scholar
6. Markiv, V. Ya, Gladyshevskiy, E. I., Fedoruk, T. I., Russian Metallurgy, 3, 118 (1966).Google Scholar
7. Mayer, J. W., Lau, S. S., and Tu, K. N., J. Appl. Phys. 50, 5855 (1979).Google Scholar
8. Hung, L.-S., Mat. Sci. Rep. 7, 221 (1991).Google Scholar
9. Tung, R. T. and Batstone, J. L., Appl. Phys. Lett. 52, 648 (1988).Google Scholar