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Er-Doped GaAs for High Speed Photoconductor Applications

Published online by Cambridge University Press:  21 February 2011

S. Gupta ,
S. Sethi ,
P. K. Bhattacharya  and
S. Williamson
S. Gupta
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
S. Sethi
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
P. K. Bhattacharya
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
S. Williamson
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

The observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 347
Copyright
Copyright © Materials Research Society 1993

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References

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