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Electron Mobility In N-Type Epitaxial ZnSe
Published online by Cambridge University Press: 25 February 2011
Abstract
An analysis of the temperature dependent mobility in lightly doped ZnSe epitaxial layers grown on a semi-insulating GaAs substrate by Molecular Beam Epitaxy is reported. Our results indicate that the temperature dependence of the mobility is in poor agreement with calculated values based on typical phonon and ionized impurity scattering mechanisms. Good agreement between theory and experimental data call be obtained by including a scattering term associated with the space-charge region surrounding defects.
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- Copyright © Materials Research Society 1991
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